Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 831-835
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发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响

石瑞英 , 孙海锋 , 袁志鹏 , 罗明雄 and 汪宁

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Key words: 发射极镇流电阻, In0.49Ga0.51P/GaAsHBT, 直流特性, 高频特性

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 831-835
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      • Received Date: 2015-08-19

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