| Citation: |
Liu Liang, Zhang Haiying, Yin Junjian, Li Xiao, Xu Jingbo, Song Yuzhu, Liu Xunchun. A New Method for InGaAs/InP Composite ChannelHEMTs Simulation[J]. Journal of Semiconductors, 2007, In Press.
Liu L, Zhang H Y, Yin J J, Li X, Xu J B, Song Y Z, Liu X C. A New Method for InGaAs/InP Composite ChannelHEMTs Simulation[J]. Chin. J. Semicond., 2007, 28(11): 1706.
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A New Method for InGaAs/InP Composite ChannelHEMTs Simulation
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Abstract
A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors (HEMTs).By coupling the hydrodynamic model and the density gradient model,the electron density distribution in the channel in different electric fields is obtained.This method is faster and more robust than traditional methods and should be applicable to other types of HEMTs simulations.A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.-
Keywords:
- InP,
- InGaAs,
- composite channel,
- HEMTs,
- simulation
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References
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