SEMICONDUCTOR DEVICES

70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz

Tingting Han1, Shaobo Dun1, Yuanjie Lü1, Guodong Gu2, Xubo Song2, Yuangang Wang2, Peng Xu2 and Zhihong Feng1,

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 Corresponding author: Corresponding author. Email: ga917vv@163.com

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Abstract: InAlN/GaN high-electron-mobility transistors (HEMTs) on SiC substrate were fabricated and characterized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InAlN/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/mm at Vgs = 1 V and a maximum peak transconductance of 382 mS/mm. In addition, a unity current gain cut-off frequency (fT) of 162 GHz and a maximum oscillation frequency (fmax) of 176 GHz are achieved on the devices with the 70 nm gate length.

Key words: InAlN/GaNhigh-electron-mobility transistors (HEMTs)T-shaped gatecurrent gain cut-off frequency (fT)maximum oscillation frequency (fmax)



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Fig. 1.  Schematic diagram of the InAlN/GaN heterostructure.

Fig. 2.  Cross-sectional SEM image of the 70-nm T-shaped gate.

Fig. 3.  Output characteristics of the InAlN/GaN HEMTs.

Fig. 4.  Transfer characteristics of the InAlN/GaN HEMTs.

Fig. 5.  Small signal RF performance of the InAlN/GaN HEMTs and the model parameters.

Fig. 6.  Comparison of measured fT and fmax in InAlN/GaN HEMTs from different groups.

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    Received: 08 July 2015 Revised: Online: Published: 01 February 2016

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      Tingting Han, Shaobo Dun, Yuanjie Lü, Guodong Gu, Xubo Song, Yuangang Wang, Peng Xu, Zhihong Feng. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz[J]. Journal of Semiconductors, 2016, 37(2): 024007. doi: 10.1088/1674-4926/37/2/024007 T T Han, S B Dun, Y Lü, G D Gu, X B Song, Y G Wang, P Xu, Z H Feng. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz[J]. J. Semicond., 2016, 37(2): 024007. doi: 10.1088/1674-4926/37/2/024007.Export: BibTex EndNote
      Citation:
      Tingting Han, Shaobo Dun, Yuanjie Lü, Guodong Gu, Xubo Song, Yuangang Wang, Peng Xu, Zhihong Feng. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz[J]. Journal of Semiconductors, 2016, 37(2): 024007. doi: 10.1088/1674-4926/37/2/024007

      T T Han, S B Dun, Y Lü, G D Gu, X B Song, Y G Wang, P Xu, Z H Feng. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz[J]. J. Semicond., 2016, 37(2): 024007. doi: 10.1088/1674-4926/37/2/024007.
      Export: BibTex EndNote

      70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with fT/fmax > 160 GHz

      doi: 10.1088/1674-4926/37/2/024007
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      Project supported by the National Natural Science Foundation of China (No. 61306113).

      More Information
      • Corresponding author: Corresponding author. Email: ga917vv@163.com
      • Received Date: 2015-07-08
      • Accepted Date: 2015-08-14
      • Published Date: 2016-01-25

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