| Citation: |
Wang Xiaohua, Zhan Wang, Liu Guojun. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Journal of Semiconductors, 2007, In Press.
Wang X H, Zhan W, Liu G J. Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED[J]. Chin. J. Semicond., 2007, 28(1): 104.
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Growth and Optical Characteristics of 408nm InGaN/GaN MQW LED
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Abstract
High efficiency output of a violet LED is obtained by increasing the growth temperature of InGaN quantum wells,reducing the intermingling efficiency of In content,and improving the quality of InGaN/GaN.High-resolution X-ray double crystal diffraction and a scanning tube microscope are used to characterize the configuration and optical characteristics of InGaN/GaN MQW grown at high temperatures.The output power of a packaged 300μm×300μm LED is 5.2mW under a 20mA input current,the output wavelength is 408nm.-
Keywords:
- quantum well,
- GaN,
- LED
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References
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