Abstract: The influences of different spaces between turns of the induction coil and different relative positions between the coil and the crucible on the temperature distribution of the growth chamber，SiC powder，growing crystal and the radial tern- perature gradients of crystal growth surfaces are investigated systematically for the large size 6H-SiC growth. All simulations results indicate that the temperature field in the growth system can be optimized by adjusting the height and spaces between turns of inductive coil，assuming that the output power and frequency，as well as inner radius of blind hole are constant.

Key words: PVT method, SiC powder temperature distribution, temperature gradient, 温度梯度