| Citation: |
Zhang Xuefeng, Xu Jingping, Zou Xiao, Zhang Lanjun. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Journal of Semiconductors, 2006, In Press.
Zhang X F, Xu J P, Zou X, Zhang L J. A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET[J]. Chin. J. Semicond., 2006, 27(11): 2000.
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A Low-Field Hole Mobility Model of Strained Si1-xGex pMOSFET
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Abstract
A semi-experienced low-field hole mobility model of a strained Si1-xGex/Si pMOSFET is proposed by considering the effect of the strain on the energy-band structure of SiGe alloy.This model includes the variation of mobility with strain (Ge content) and the coulomb-scattering mechanism of interface-trapped charges on inversion carriers.Using the model,the change of the hole mobility with strain (Ge content) is simulated at room temperature,and the influence of some factors on mobility is discussed.-
Keywords:
- p-MOSFET,
- strained Si1-xGex,
- hole mobility
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References
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Proportional views
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