Chin. J. Semicond. > 2005, Volume 26 > Issue S1 > 129-131
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Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes

Guo Xia, Dong Limin, Qu Hongwei, Da Xiaoli, Du Jinyu, Deng Jun and Shen Guangdi

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Abstract: 980nm vertical-cavity surface-emitting-diodes (VCSELs) are fabricated by employing metal organic chemical vapor deposition technique and AlAs/AlGaAs selective wet nitrogen oxidation technique which helps to realize the electrical and optical confinement in the VCSEL devices.The effects of oxidation aperture size on the performance of the VCSEL,such as threshold current and series resistance,are analyzed through fabricating VCSELs with different aperture size at the same time.The minimum threshold current is 0.8mA and the maximum optical output power achieved is about 8mW.

Key words: vertical-cavity surface-emitting-diode,  intracavity contact,  wet nitrogen oxidation

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(S1): 129-131
      Guo Xia, Dong Limin, Qu Hongwei, Da Xiaoli, Du Jinyu, Deng Jun, Shen Guangdi. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Journal of Semiconductors, 2005, In Press. Guo X, Dong L M, Qu H W, Da X L, Du J Y, Deng J, Shen G D. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Chin. J. Semicond., 2005, 26(13): 129.Export: BibTex EndNote
      Citation:
      Guo Xia, Dong Limin, Qu Hongwei, Da Xiaoli, Du Jinyu, Deng Jun, Shen Guangdi. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Journal of Semiconductors, 2005, In Press.

      Guo X, Dong L M, Qu H W, Da X L, Du J Y, Deng J, Shen G D. Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes[J]. Chin. J. Semicond., 2005, 26(13): 129.
      Export: BibTex EndNote
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      Fabrication of 980nm Vertical-Cavity Surface-Emitting-Diodes

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • School of Electronic Information and Engineering,Beijing University of Technology,Beijing Optoelectronic Technology Laboratory, Beijing 100022,China

      • Received Date: 2015-08-19

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