| Citation: |
Liu Linsheng, Wang Wenxin, Liu Su, Zhao Hongming, Liu Baoli, Jiang Zhongwei, Gao Hanchao, Wang Jia, Huang Qing’an, Chen Hong, Zhou Junming. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Journal of Semiconductors, 2007, In Press.
Liu L S, Wang W X, Liu S, Zhao H, Liu B L, Jiang Z W, Gao H C, Wang J, Huang Q, Chen H, Zhou J M. Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy[J]. Chin. J. Semicond., 2007, 28(9): 1411.
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Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy
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Abstract
A series of samples with different growth temperatures and different BEP ratios were grown on GaAs (110) substrates by molecular beam epitaxy.The samples were investigated via room temperature and low temperature photoluminescence spectra and high resolution X-ray diffraction.Then the optimized growth conditions of Al0.4Ga0.6As films on GaAs (110) substrates were found.-
Keywords:
- molecular beam epitaxy,
- GaAs substrate,
- AlGaAs
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