Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 626-630

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超深亚微米PMOSFET器件的NBTI效应

韩晓亮 and 郝跃

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Key words: 超深亚微米, NBTI效应, 可靠性

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    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      • Received Date: 2015-08-20

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