Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 576-579

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Abstract: 分别利用0.35μm CMOS工艺和0.2μm GaAs PHEMT(pseudomorphic high electron mobility transistor)工艺实现了激光驱动器集成电路,其工作速率分别为2.5Gb/s和10Gb/s,可应用于光纤通信SDH(synchronous digital hierarchy)传输系统.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      超高速激光驱动器电路设计与研制[J]. Journal of Semiconductors, 2005, In Press. 超高速激光驱动器电路设计与研制[J]. Chin. J. Semicond., 2005, 26(3): 576.Export: BibTex EndNote
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      超高速激光驱动器电路设计与研制[J]. Journal of Semiconductors, 2005, In Press.

      超高速激光驱动器电路设计与研制[J]. Chin. J. Semicond., 2005, 26(3): 576.
      Export: BibTex EndNote

      超高速激光驱动器电路设计与研制

      • Received Date: 2015-08-19

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