J. Semicond. > 2015, Volume 36 > Issue 3 > 034006, doi: 10.1088/1674-4926/36/3/034006
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SEMICONDUCTOR DEVICES

Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

Shuyan Zhu1, , Jingping Xu1, Lisheng Wang1, 2, Yuan Huang1 and Wing Man Tang3

+ Author Affiliations

 Corresponding author: Shuyan Zhu, E-mail: jpxu@mail.hust.edu.cn

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Abstract: GaAs metal—oxide—semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al2O3 or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al2O3 IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al2O3 IPL exhibits better interfacial and electrical properties than the device with ZnO IPL: lower interface-state density (7.2 × 1012 eV-1cm-2), lower leakage current density (3.60 × 10-7 A/cm2 at Vg = 1 V) and good C—V behavior.

Key words: GaAs, MOS devices, interface passivation layer (IPL), high-k dielectric



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Fig. 1.  HF $C$-$V$ characteristics of the samples.

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Fig. 2.  XPS spectrum of Zn 2p with or without Ar$^{+}$-ion etching for HfTiO/ZnO sample.

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Fig. 3.  XPS spectrum of As 3p of the as-fabricated HfTiO/ZnO stack (without etching). Obviously, As bonds are detected.

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Fig. 4.  $I$-$V$ characteristics of all the samples.

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Fig. 5.  XPS spectrum of Ga 3d for the samples. (a) HfTiO sample, (b) HfTiO/ZnO sample and (c) HfTiO/Al$_{2}$O$_{3}$.

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Fig. 6.  XPS spectrum of As 3p for the samples. (a) HfTiO sample, (b) HfTiO/ZnO sample and (c) HfTiO/Al$_{2}$O$_{3}$.

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Fig. 7.  XPS spectrum of O 1s for the samples. (a) HfTiO sample, (b) HfTiO/ZnO sample and (c) HfTiO/Al$_{2}$O$_{3}$ sample. The inset is the Ti 2p spectrum.

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Table 1.   Electrical and physical parameters of all the samples.

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    Received: 28 June 2014 Revised: Online: Published: 01 March 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(3): 034006
      Shuyan Zhu, Jingping Xu, Lisheng Wang, Yuan Huang, Wing Man Tang. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric[J]. Journal of Semiconductors, 2015, 36(3): 034006. doi: 10.1088/1674-4926/36/3/034006 S Y Zhu, J P Xu, L S Wang, Y Huang, W M Tang. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric[J]. J. Semicond., 2015, 36(3): 034006. doi: 10.1088/1674-4926/36/3/034006.Export: BibTex EndNote
      Citation:
      Shuyan Zhu, Jingping Xu, Lisheng Wang, Yuan Huang, Wing Man Tang. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric[J]. Journal of Semiconductors, 2015, 36(3): 034006. doi: 10.1088/1674-4926/36/3/034006

      S Y Zhu, J P Xu, L S Wang, Y Huang, W M Tang. Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric[J]. J. Semicond., 2015, 36(3): 034006. doi: 10.1088/1674-4926/36/3/034006.
      Export: BibTex EndNote
      shu

      Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric

      doi: 10.1088/1674-4926/36/3/034006
      • 1.

        School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

      • 2.

        Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China

      • 3.

        Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112).

      More Information
      • Corresponding author: E-mail: jpxu@mail.hust.edu.cn
      • Received Date: 2014-06-28
      • Accepted Date: 2014-10-28
      • Published Date: 2015-01-25

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