Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 494-497

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Abstract: 用MOCVD技术在50mm蓝宝石衬底(0001)面上生长了GaN∶Mg外延膜,对样品进行热退火处理并作了Hall、双晶X射线衍射(DCXRD)和室温光致发光谱(PL)测试.Hall测试结果表明,950℃退火后空穴浓度达到5e17cm-3以上,电阻率降到2.5Ω·cm;(0002)面DCXRD测试发现样品退火前、后的半峰宽均约为4′;室温PL谱中发光峰位于2.85eV处,退火后峰的强度比退火前增强了8倍以上,表明样品中大量被H钝化的受主Mg原子在退火后被激活.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      MOCVD生长Mg掺杂GaN的退火研究[J]. Journal of Semiconductors, 2005, In Press. MOCVD生长Mg掺杂GaN的退火研究[J]. Chin. J. Semicond., 2005, 26(3): 494.Export: BibTex EndNote
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      MOCVD生长Mg掺杂GaN的退火研究[J]. Journal of Semiconductors, 2005, In Press.

      MOCVD生长Mg掺杂GaN的退火研究[J]. Chin. J. Semicond., 2005, 26(3): 494.
      Export: BibTex EndNote

      MOCVD生长Mg掺杂GaN的退火研究

      • Received Date: 2015-08-19

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