Chin. J. Semicond. > 2007, Volume 28 > Issue 8 > 1198-1203

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Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui and Wang Qian

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Abstract: A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=1e-12.

Key words: photo-detectoroptoelectronic integrated receiverCMOSactive inductor

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    Received: 18 August 2015 Revised: 05 April 2007 Online: Published: 01 August 2007

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      Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui, Wang Qian. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Journal of Semiconductors, 2007, In Press. Yu C L, Mao L H, Song R L, Zhu H B, Wang R, Wang Q. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Chin. J. Semicond., 2007, 28(8): 1198.Export: BibTex EndNote
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      Yu Changliang, Mao Luhong, Song Ruiliang, Zhu Haobo, Wang Rui, Wang Qian. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Journal of Semiconductors, 2007, In Press.

      Yu C L, Mao L H, Song R L, Zhu H B, Wang R, Wang Q. Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process[J]. Chin. J. Semicond., 2007, 28(8): 1198.
      Export: BibTex EndNote

      Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-14
      • Revised Date: 2007-04-05
      • Published Date: 2007-08-08

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