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A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application

Yuzhe Liu, Pengfei Mu, Renjie Gong, Jing Wan, Yulin Zhang and Yuepeng Yan

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 Corresponding author: Liu Yuzhe, Email:liuyuzhe@ime.ac.cn

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Abstract: This paper presents a 4×2 switching matrix implemented in the Win 0.5 μm GaAs pseudomorphic high electron mobility transistor process, it covers the 0.5-3 GHz frequency range. The switch matrix is composed of 4 SPDT switch whose two output ports can simultaneously select the input port and a 4 to 8 bit digital decoder, both the radio frequency (RF) part and the digital part are integrated into one single chip. The chip is packaged in a low cost QFN24 plastic package. On chip shunt, capacitors at the input ports are taken to compensate for the bonding wire inductance effect. The designed switch matrix shows a good measured performance:the insertion loss is less than 5.5 dB, the isolation is no worse than 30 dB, the return loss of input ports and output ports is better than -10 dB, the input 1 dB compression point is better than 25.6 dBm, and the OIP3 is better than 37 dBm. The chip size of the switch matrix is only 1.45×1.45 mm2.

Key words: switch matrixPHEMTsingle pole double throw (SPDT)decoderQFN24



[1]
Voudouris K, Athanaspoulos N, Meir A, et al. 2×2 switch matrix for Wimax relay station applications. IEEE Microw Wireless Compon Lett, 2011, 21(8):424 doi: 10.1109/LMWC.2011.2158532
[2]
Donghyup S, Dong-Woo K, Rebeiz G M, et al. A 0.01-8 GHz (12.5 Gb/s) 4×4 CMOS switch matrix. IEEE Trans Microw Theory Tech, 2012, 60(2):381 doi: 10.1109/TMTT.2011.2176501
[3]
Chan E, Daneshmand M, Mansour R R, et al. Monolithic crossbar MEMS switch matrix. MTT-S, 2008:129 http://ieeexplore.ieee.org/document/4633120/
[4]
Gupta R, Assal F, Hampsch T. A microwave switch matrix using MMICs for satellite applications. MTT-S, 1990:885 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=99720
[5]
Gaspari R A, Yee H H. Microwave GaAs FET switching. MTT-S, 1978:58 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1123786
[6]
Kamitsuna H, Yamane Y, Tokumitsu M, et al. A miniaturized wideband 4×4 switch matrix IC using four InP-HEMT SP4T switches. MTT-S, 2005:4 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1517140
[7]
Chang-Ho L, Banerjee B, Laskar J. Novel T/R switch architectures for MIMO applications. MTT-S, 2004, 2:1137 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1339186
[8]
Chang D P, Noh Y S, Yom I B. Design of high performance HEMT switch for S-band MSM of satellite transponder. VTC, 2008:2888 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4526185
[9]
Wang Xiaoying, Guo Wenting, Peng Yangyang, et al. GaAs PHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications. Journal of Zhejiang University-Science C (Computers & Electronics), 2011, 12(4):317 http://d.wanfangdata.com.cn/Periodical_zjdxxbc-e201104007.aspx
[10]
Chiu H C, Cheng C S, Shih J Y, et al. Enhancement-and depletion-mode InGaP/InGaAs PHEMTs on 6-inch GaAs substrate. APMC, 2005:4 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1606443
[11]
Li Ming, Zhang Haiying, Xu Jingbo, et al. Monolithic integrated switches and logic control circuit with E/D-mode GaAs PHEMTs. Journal of Semiconductors, 2008, 29(9):1823 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=08012902&journal_id=bdtxbcn
[12]
Wei C J, Yin H, Klimashov O, et al. Multi-gate pHEMT modeling for switch applications. CSICS, 2012:4 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6340063
[13]
Su Liming, Yang Hongwen, Liu Yuzhe, et al. DC-4GHz packaged high isolation non-reflective SPDT switch. Semicond Technol, 2013, 38(6):419 http://www.en.cnki.com.cn/Article_en/CJFDTotal-BDTJ201306007.htm
Fig. 1.  Switch matrix topology

Fig. 2.  SPDT switch unit

Fig. 3.  RF performance comparison. (a) Insertion loss. (b) Isolation. (c) Return loss

Fig. 4.  (a) Series SPDT switch. (b) Wave form clipping of the SPDT switch

Fig. 5.  HFSS model of QFN24 package

Fig. 6.  (a) Bare die and (b) packaged chip on PCB testing board

Fig. 7.  (a) Insertion loss. (b) Isolation (when IP1 is connected to OP1). (c) Return loss

Table 1.   SPDT logic true table

Table 2.   True table of the decoder

[1]
Voudouris K, Athanaspoulos N, Meir A, et al. 2×2 switch matrix for Wimax relay station applications. IEEE Microw Wireless Compon Lett, 2011, 21(8):424 doi: 10.1109/LMWC.2011.2158532
[2]
Donghyup S, Dong-Woo K, Rebeiz G M, et al. A 0.01-8 GHz (12.5 Gb/s) 4×4 CMOS switch matrix. IEEE Trans Microw Theory Tech, 2012, 60(2):381 doi: 10.1109/TMTT.2011.2176501
[3]
Chan E, Daneshmand M, Mansour R R, et al. Monolithic crossbar MEMS switch matrix. MTT-S, 2008:129 http://ieeexplore.ieee.org/document/4633120/
[4]
Gupta R, Assal F, Hampsch T. A microwave switch matrix using MMICs for satellite applications. MTT-S, 1990:885 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=99720
[5]
Gaspari R A, Yee H H. Microwave GaAs FET switching. MTT-S, 1978:58 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1123786
[6]
Kamitsuna H, Yamane Y, Tokumitsu M, et al. A miniaturized wideband 4×4 switch matrix IC using four InP-HEMT SP4T switches. MTT-S, 2005:4 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1517140
[7]
Chang-Ho L, Banerjee B, Laskar J. Novel T/R switch architectures for MIMO applications. MTT-S, 2004, 2:1137 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1339186
[8]
Chang D P, Noh Y S, Yom I B. Design of high performance HEMT switch for S-band MSM of satellite transponder. VTC, 2008:2888 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4526185
[9]
Wang Xiaoying, Guo Wenting, Peng Yangyang, et al. GaAs PHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications. Journal of Zhejiang University-Science C (Computers & Electronics), 2011, 12(4):317 http://d.wanfangdata.com.cn/Periodical_zjdxxbc-e201104007.aspx
[10]
Chiu H C, Cheng C S, Shih J Y, et al. Enhancement-and depletion-mode InGaP/InGaAs PHEMTs on 6-inch GaAs substrate. APMC, 2005:4 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=1606443
[11]
Li Ming, Zhang Haiying, Xu Jingbo, et al. Monolithic integrated switches and logic control circuit with E/D-mode GaAs PHEMTs. Journal of Semiconductors, 2008, 29(9):1823 http://www.jos.ac.cn/bdtxbcn/ch/reader/view_abstract.aspx?flag=1&file_no=08012902&journal_id=bdtxbcn
[12]
Wei C J, Yin H, Klimashov O, et al. Multi-gate pHEMT modeling for switch applications. CSICS, 2012:4 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6340063
[13]
Su Liming, Yang Hongwen, Liu Yuzhe, et al. DC-4GHz packaged high isolation non-reflective SPDT switch. Semicond Technol, 2013, 38(6):419 http://www.en.cnki.com.cn/Article_en/CJFDTotal-BDTJ201306007.htm
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    Received: 04 May 2014 Revised: 13 June 2014 Online: Published: 01 December 2014

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      Yuzhe Liu, Pengfei Mu, Renjie Gong, Jing Wan, Yulin Zhang, Yuepeng Yan. A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application[J]. Journal of Semiconductors, 2014, 35(12): 125012. doi: 10.1088/1674-4926/35/12/125012 Y Z Liu, P F Mu, R J Gong, J Wan, Y L Zhang, Y P Yan. A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application[J]. J. Semicond., 2014, 35(12): 125012. doi: 10.1088/1674-4926/35/12/125012.Export: BibTex EndNote
      Citation:
      Yuzhe Liu, Pengfei Mu, Renjie Gong, Jing Wan, Yulin Zhang, Yuepeng Yan. A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application[J]. Journal of Semiconductors, 2014, 35(12): 125012. doi: 10.1088/1674-4926/35/12/125012

      Y Z Liu, P F Mu, R J Gong, J Wan, Y L Zhang, Y P Yan. A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application[J]. J. Semicond., 2014, 35(12): 125012. doi: 10.1088/1674-4926/35/12/125012.
      Export: BibTex EndNote

      A 4×2 switch matrix in QFN24 package for 0.5-3 GHz application

      doi: 10.1088/1674-4926/35/12/125012
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      • Corresponding author: Liu Yuzhe, Email:liuyuzhe@ime.ac.cn
      • Received Date: 2014-05-04
      • Revised Date: 2014-06-13
      • Published Date: 2014-12-01

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