| Citation: |
Zhang Guanjie, Xu Bo, Chen Yonghai, Yao Jianghong, Lin Yaowang, Shu Yongchun, Pi Biao, Xing Xiaodong, Liu Rubin, Shu Qiang, Wang Zhanguo, Xu Jingjun. Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses[J]. Journal of Semiconductors, 2006, In Press.
Zhang G J, Xu B, Chen Y H, Yao J H, Lin Y W, Shu Y C, Pi B, Xing X D, Liu R B, Shu Q, Wang Z G, Xu J J. Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses[J]. Chin. J. Semicond., 2006, 27(6): 1012.
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Raman Scattering of InAs Quantum Dots with Different Deposition Thicknesses
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Abstract
The Raman scattering of InAs/GaAs self-assembled quantum dots(QDs) with different InAs thicknesses is investigated.The vibrational mode,which can be assigned to QD phonons,is observed.Analysis indicates that strain is the most important factor that influences the InAs QD frequency.As the InAs deposition thickness L increases,the InAs-like LO mode frequency decreases,which we attribute to the relaxation of the strain in the QD layer.In another sample with an InAlAs strain buffer layer,the AlAs-like LO mode shows a blue shift as L increases.This also supports the proposed strain relaxation process in QDs.-
Keywords:
- quantum dots,
- Raman scattering,
- strain effect,
- confinement effect
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