| Citation: |
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J]. Journal of Semiconductors, 2005, In Press.
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror[J]. Chin. J. Semicond., 2005, 26(2): 250.
Export: BibTex EndNote
|
Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror
-
Abstract
A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented. Using the mirror as well as an end mirror，passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 305ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW. -
References
-
Proportional views
DownLoad: