Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 204-217

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Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction

Xu Wen

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Abstract: A systematic theoretical approach is developed to study the electronic and transport properties of a two-dimensional electron gas (2DEG) in the presence of spin-orbit interactions induced by the Rashba effect.The standard random-phase approximation is employed to calculate the screening length caused by electron-electron interaction in different transition channels.The quantum and transport mobilities in different spin branches are evaluated using the momentum-balance equation derived from the Boltzmann equation,in which the electron interactions with both the remote and background impurities are taken into account in an InAlAs/InGaAs heterojunction at low-temperatures

Key words: InGaAs/InAlAs HEMT2D modeling and simulationpolarization chargesquantum effects

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Xu Wen. Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction[J]. Journal of Semiconductors, 2006, In Press. Xu W. Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction[J]. Chin. J. Semicond., 2006, 27(2): 204.Export: BibTex EndNote
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      Xu Wen. Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction[J]. Journal of Semiconductors, 2006, In Press.

      Xu W. Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction[J]. Chin. J. Semicond., 2006, 27(2): 204.
      Export: BibTex EndNote

      Quantum and Transport Mobilities of a Two-Dimensional Electron Gas in the Presence of the Rashba Spin-Orbit Interaction

      • Received Date: 2015-08-20

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