SEMICONDUCTOR TECHNOLOGY

Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology

Bing Wang, Bin Gu, Rongying Pan, Sijia Zhang and Jianhua Shen

+ Author Affiliations

 Corresponding author: Bin Gu, E-mail: gubin@swust.edu.cn

PDF

Abstract: Defect evolution in a single crystal silicon which is implanted with hydrogen atoms and then annealed is investigated in the present paper by means of molecular dynamics simulation. By introducing defect density based on statistical average, this work aims to quantitatively examine defect nucleation and growth at nanoscale during annealing in Smart-Cut® technology. Research focus is put on the effects of the implantation energy, hydrogen implantation dose and annealing temperature on defect density in the statistical region. It is found that most defects nucleate and grow at the annealing stage, and that defect density increases with the increase of the annealing temperature and the decrease of the hydrogen implantation dose. In addition, the enhancement and the impediment effects of stress field on defect density in the annealing process are discussed.

Key words: Smart-Cut®molecular dynamicshydrogen implantationdefect density



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
Fig. 1.  Configuration of MD models. (a) MD model for hydrogen implantation. (b) MD model for the annealing of as-implanted silicon.

Fig. 2.  (Color online) Distribution of H atoms in as-implanted Si. Here (10 keV, 2580) denotes that 2580 H atoms are implanted with the energy of 10 keV. The red curves represent the fitted Gaussian distribution functions.

Fig. 3.  (Color online) MD simulation results at different time steps in the annealing process when $I$ $=$ 3685, $E$ $=$ 10 keV and $T_{\rm A}$ $=$ 600 C. The leftmost figure shows the as-implanted Si with $z$ from 2000 to 3136.08 {\AA}. The other figures show the distribution of H atoms and Si atoms in the statistical region at the time steps of 0, 100000, 200000, 240000, 242000, 244000, 246000, 248000 and 250000. (Red particle: Si atom, green particle: H atom).

Fig. 4.  Variation of defect density in the statistical region with the progress of annealing when $I$ $=$ 3685, $T_{\rm A}$ $=$ 600 C and $E$ $=$ 10, 50 and 100 keV.

Fig. 5.  Schematic of (a) the enhancement and (b) the impediment effects of stress field between the statistical region and the surrounding regions.

Fig. 6.  Variation of defect density in the statistical region with the progress of annealing when $E$ $=$ 10 keV, $I$ $=$ 2580, 3685, 5898 and 7373 and $T_{\rm A}$ $=$ 400, 500 and 600 C.

Fig. 7.  Variation of defect density in the statistical region with the progress of annealing when $E$ $=$ 10 keV, $T_{\rm A}$ $=$ 400 $ \du$, and $I$ $=$ 2580, 3685, 5898 and 7373.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2369 Times PDF downloads: 20 Times Cited by: 0 Times

    History

    Received: 16 September 2014 Revised: Online: Published: 01 March 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Bing Wang, Bin Gu, Rongying Pan, Sijia Zhang, Jianhua Shen. Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology[J]. Journal of Semiconductors, 2015, 36(3): 036003. doi: 10.1088/1674-4926/36/3/036003 B Wang, B Gu, R Y Pan, S J Zhang, J H Shen. Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology[J]. J. Semicond., 2015, 36(3): 036003. doi: 10.1088/1674-4926/36/3/036003.Export: BibTex EndNote
      Citation:
      Bing Wang, Bin Gu, Rongying Pan, Sijia Zhang, Jianhua Shen. Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology[J]. Journal of Semiconductors, 2015, 36(3): 036003. doi: 10.1088/1674-4926/36/3/036003

      B Wang, B Gu, R Y Pan, S J Zhang, J H Shen. Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology[J]. J. Semicond., 2015, 36(3): 036003. doi: 10.1088/1674-4926/36/3/036003.
      Export: BibTex EndNote

      Molecular dynamics study on splitting of hydrogen-implanted silicon in Smart-Cut® technology

      doi: 10.1088/1674-4926/36/3/036003
      Funds:

      Project supported by the National Natural Science Foundation of China (No. 11372261), the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province (No. 2013JQ0030), the Supporting Project of Department of Education of Sichuan Province (No. 2014zd3132), the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process, Southwest University of Science and Technology-Ministry of Education (No. 12zxzk02), the Fund of Doctoral Research of Southwest University of Science and Technology (No. 12zx7106), and the Postgraduate Innovation Fund Project of Southwest University of Science and Technology (No. 14ycxjj0121).

      More Information
      • Corresponding author: E-mail: gubin@swust.edu.cn
      • Received Date: 2014-09-16
      • Accepted Date: 2014-12-26
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return