SEMICONDUCTOR INTEGRATED CIRCUITS

A low jitter PLL clock used for phase change memory

Xiao Hong, Houpeng Chen, Zhitang Song, Daolin Cai and Xi Li

+ Author Affiliations

 Corresponding author: Hong Xiao, Email:hongxiao@mail.sim.ac.cn

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Abstract: A fully integrated low-jitter, precise frequency CMOS phase-locked loop (PLL) clock for the phase change memory (PCM) drive circuit is presented. The design consists of a dynamic dual-reset phase frequency detector (PFD) with high frequency acquisition, a novel low jitter charge pump, a CMOS ring oscillator based voltage-controlled oscillator (VCO), a 2nd order passive loop filter, and a digital frequency divider. The design is fabricated in 0.35 μm CMOS technology and consumes 20 mW from a supply voltage of 5 V. In terms of the PCM's program operation requirement, the output frequency range is from 1 to 140 MHz. For the 140 MHz output frequency, the circuit features a cycle-to-cycle jitter of 28 ps RMS and 250 ps peak-to-peak.

Key words: PLLPFDcharge pumpVCOPCM



[1]
Lai S, Lowrey T. OUM——a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications. IEDM, 2001, 36(5):1 https://core.ac.uk/display/1508489
[2]
Lavizzari S, Sharma D, Ielmini D. Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices. IEEE Trans Electron Devices, 2010, 57(5):1047 doi: 10.1109/TED.2010.2042768
[3]
Shi X T, Imfeld K. A low-jitter and low-power CMOS PLL for clock multiplication. Proceedings of the 32nd European IEEE Solid-State Circuits Conference, ESSCIRC, 2006:174
[4]
Keliu S. CMOS PLL synthesizers analysis and design. Boston, Springer Science + Business Media, 2005 doi: 10.1007/b102174
[5]
Todd C W, Beomsup K. Analysis of timing jitter in CMOS ring oscillators. IEEE Proceedings of ISCAS, 1994:191 http://citeseerx.ist.psu.edu/showciting?cid=729794
[6]
Mansuri M, Liu D, Yang C K. Fast frequency acquisition phase-frequency detectors for GSamples/s phase-locked loops. IEEE J Solid-State Circuits, 2002, 37(10):1331 doi: 10.1109/JSSC.2002.803048
[7]
Jae-Shin L, Min-Sun K. Charge pump with perfect current matching characteristics in phase-locked loops. Electron Lett, 2000, 36(23):1907 doi: 10.1049/el:20001358
[8]
Mansuri M, Yang C K. A low-power adaptive bandwidth PLL and clock buffer with supply-noise compensation. IEEE J Solid-State Circuits, 2003, 38(11):1804 doi: 10.1109/JSSC.2003.818300
[9]
John G M, Mark A H. Precise delay generation using coupled oscillators. IEEE J Solid-State Circuits, 1993, 28(12):1273 doi: 10.1109/4.262000
[10]
Hong X, Chen H P, Song Z T, et al. A low noise clock generator for phase change memories. Microelectron, 2011, 41(4):540
[11]
Ge Y, Jia S. A fast acquisition PLL with wide tuning range. Chinese Journal of Semiconductors, 2007, 28(3):365
Fig. 1.  PCM circuit structure.

Fig. 2.  PLL architecture and phase model.

Fig. 3.  Non-ideal PFD characteristics.

Fig. 4.  The proposed PFD design.

Fig. 5.  Conventional and proposed charge pump.

Fig. 6.  VCO block diagram and CCO circuits.

Fig. 7.  Level shifter circuit.

Fig. 8.  PLL chip photograph.

Fig. 9.  Measured sensitivity of the VCO to static supply noise at PLL lock status.

Fig. 10.  Jitter measure result at 140 MHz output frequency.

Table 1.   Proposed PLL performance summary and comparison.

[1]
Lai S, Lowrey T. OUM——a 180 nm nonvolatile memory cell element technology for stand alone and embedded applications. IEDM, 2001, 36(5):1 https://core.ac.uk/display/1508489
[2]
Lavizzari S, Sharma D, Ielmini D. Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices. IEEE Trans Electron Devices, 2010, 57(5):1047 doi: 10.1109/TED.2010.2042768
[3]
Shi X T, Imfeld K. A low-jitter and low-power CMOS PLL for clock multiplication. Proceedings of the 32nd European IEEE Solid-State Circuits Conference, ESSCIRC, 2006:174
[4]
Keliu S. CMOS PLL synthesizers analysis and design. Boston, Springer Science + Business Media, 2005 doi: 10.1007/b102174
[5]
Todd C W, Beomsup K. Analysis of timing jitter in CMOS ring oscillators. IEEE Proceedings of ISCAS, 1994:191 http://citeseerx.ist.psu.edu/showciting?cid=729794
[6]
Mansuri M, Liu D, Yang C K. Fast frequency acquisition phase-frequency detectors for GSamples/s phase-locked loops. IEEE J Solid-State Circuits, 2002, 37(10):1331 doi: 10.1109/JSSC.2002.803048
[7]
Jae-Shin L, Min-Sun K. Charge pump with perfect current matching characteristics in phase-locked loops. Electron Lett, 2000, 36(23):1907 doi: 10.1049/el:20001358
[8]
Mansuri M, Yang C K. A low-power adaptive bandwidth PLL and clock buffer with supply-noise compensation. IEEE J Solid-State Circuits, 2003, 38(11):1804 doi: 10.1109/JSSC.2003.818300
[9]
John G M, Mark A H. Precise delay generation using coupled oscillators. IEEE J Solid-State Circuits, 1993, 28(12):1273 doi: 10.1109/4.262000
[10]
Hong X, Chen H P, Song Z T, et al. A low noise clock generator for phase change memories. Microelectron, 2011, 41(4):540
[11]
Ge Y, Jia S. A fast acquisition PLL with wide tuning range. Chinese Journal of Semiconductors, 2007, 28(3):365
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    Received: 16 July 2012 Revised: 28 September 2012 Online: Published: 01 February 2013

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      Xiao Hong, Houpeng Chen, Zhitang Song, Daolin Cai, Xi Li. A low jitter PLL clock used for phase change memory[J]. Journal of Semiconductors, 2013, 34(2): 025012. doi: 10.1088/1674-4926/34/2/025012 X Hong, H P Chen, Z T Song, D L Cai, X Li. A low jitter PLL clock used for phase change memory[J]. J. Semicond., 2013, 34(2): 025012. doi: 10.1088/1674-4926/34/2/025012.Export: BibTex EndNote
      Citation:
      Xiao Hong, Houpeng Chen, Zhitang Song, Daolin Cai, Xi Li. A low jitter PLL clock used for phase change memory[J]. Journal of Semiconductors, 2013, 34(2): 025012. doi: 10.1088/1674-4926/34/2/025012

      X Hong, H P Chen, Z T Song, D L Cai, X Li. A low jitter PLL clock used for phase change memory[J]. J. Semicond., 2013, 34(2): 025012. doi: 10.1088/1674-4926/34/2/025012.
      Export: BibTex EndNote

      A low jitter PLL clock used for phase change memory

      doi: 10.1088/1674-4926/34/2/025012
      Funds:

      the Science and Technology Council of Shanghai 1052nm07000

      the National Key Basic Research Program of China 2011CB9328004

      the National Natural Science Foundation of China 61006087

      the National Natural Science Foundation of China 61106001

      the Science and Technology Council of Shanghai 11QA1407800

      the National Natural Science Foundation of China 61176122

      the National Natural Science Foundation of China 60906004

      the Chinese Academy of Sciences 20110490761

      the National Natural Science Foundation of China 61076121

      the National Key Basic Research Program of China 2011CBA00607

      the National Natural Science Foundation of China 60906003

      the National Key Basic Research Program of China 2010CB934300

      the Science and Technology Council of Shanghai 11DZ2261000

      Project supported by the National Key Basic Research Program of China (Nos. 2010CB934300, 2011CBA00607, 2011CB9328004), the National Integrate Circuit Research Program of China (No. 2009ZX02023-003), the National Natural Science Foundation of China (Nos. 60906004, 60906003, 61006087, 61076121, 61176122, 61106001), the Science and Technology Council of Shanghai (No. 11DZ2261000, 1052nm07000, 11QA1407800), and the Chinese Academy of Sciences (No. 20110490761)

      the National Integrate Circuit Research Program of China 2009ZX02023-003

      More Information
      • Corresponding author: Hong Xiao, Email:hongxiao@mail.sim.ac.cn
      • Received Date: 2012-07-16
      • Revised Date: 2012-09-28
      • Published Date: 2013-02-01

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