| Citation: |
Liu Ting, Zou Zeya, Wang Zhen, Zhao Hong, Zhao Wenbo, Luo Muchang, Zhou Xun, Yang Xiaobo, Liao Xiuying. Growth of p-GaN on High-Temperature AlN Templates[J]. Journal of Semiconductors, 2008, In Press.
Liu T, Zou Z Y, Wang Z, Zhao H, Zhao W B, Luo M C, Zhou X, Yang X B, Liao X Y. Growth of p-GaN on High-Temperature AlN Templates[J]. J. Semicond., 2008, 29(1): 128.
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Growth of p-GaN on High-Temperature AlN Templates
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Abstract
Uniformity-doping and Mg-gradual-δ-doping p-type GaN epilayers are grown on HT-AlN/sapphire templates by metalorganic chemical vapor deposition (MOCVD).Compared to those grown on GaN/sapphire templates,the Mg-gradual-δ-doping process and HT-AlN/sapphire template improve the crystal quality of p-type GaN epilayers and enhance the p-type performance.The double crystal X-ray rocking curve and the Hall measurement show a full-width at half-maximum of only 178" and the highest hole concentration of 5.78e17cm-3 for the Mg-gradual-δ-doping p-type GaN epilayers grown on HT-AlN/sapphire templates.Under the optimum ratio of Cp2Mg/TMGa,the hole concentration of the p-type GaN epilayer is improved to 8.03e17cm-3.-
Keywords:
- high-temperature lN,
- gradual-δ-doping,
- uniformity-doping,
- MOCVD,
- p-GaN
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References
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Proportional views
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