| Citation: |
Han Yan, Zhang Bin, Ding Koubao, Zhang Shifeng, Han Chenggong, Hu Jiaxian, Zhu Dazhong. Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS[J]. Journal of Semiconductors, 2010, 31(12): 124006. doi: 10.1088/1674-4926/31/12/124006
Han Y, Zhang B, Ding K B, Zhang S F, Han C G, Hu J X, Zhu D Z. Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS[J]. J. Semicond., 2010, 31(12): 124006. doi: 10.1088/1674-4926/31/12/124006.
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Hot-carrier-induced on-resistance degradation of step gate oxide NLDMOS
doi: 10.1088/1674-4926/31/12/124006
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Abstract
The hot-carrier-induced on-resistance degradations of step gate oxide NLDMOS (SG-NLDMOS) transistors are investigated in detail by a DC voltage stress experiment, a TCAD simulation and a charge pumping test. For different stress conditions, degradation behaviors of SG-NLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of various doses of n-type drain drift (NDD) region implant on Ron degradation is investigated. Experimental results show that a lower NDD dosage can reduce the hot-carrier induced Ron degradation effectively, which is different from uniform gate oxide NLDMOS (UG-NLDMOS) transistors. -
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