Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 88-91
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高性能1mm AlGaN/GaN功率HEMTs研制

邵刚 , 刘新宇 , 和致经 , 刘键 , 魏珂 , 陈晓娟 , 吴德馨 , 王晓亮 and 陈宏

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Abstract: 报道了基于蓝宝石衬底的高性能1mm AlGaN/GaN HEMTs功率器件.为了提高微波功率器件性能，采用新的欧姆接触和新型空气桥方案．测试表明，器件电流密度为0.784A/mm，跨导197mS/mm，击穿电压大于40V，截止态漏电较小，1mm栅宽器件的单位截止频率达到20GHz，最大振荡频率为28GHz，功率增益为11dB，功率密度为1.2W/mm,PAE为32%,两端口阻抗特性显示了在微波应用中的良好潜力．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 88-91
      高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, In Press. 高性能1mm AlGaN/GaN功率HEMTs研制[J]. Chin. J. Semicond., 2005, 26(1): 88.Export: BibTex EndNote
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      高性能1mm AlGaN/GaN功率HEMTs研制[J]. Journal of Semiconductors, 2005, In Press.

      高性能1mm AlGaN/GaN功率HEMTs研制[J]. Chin. J. Semicond., 2005, 26(1): 88.
      Export: BibTex EndNote
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      高性能1mm AlGaN/GaN功率HEMTs研制

      • Received Date: 2015-08-19

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