Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 541-546

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Abstract: 提出有n埋层的横向变掺杂双RESURF 新结构高压LDMOS器件.该结构器件与常规LDMOS相比,采用了相对较薄的外延层,使之与标准CMOS工艺的兼容性得到了改善.基于二维器件仿真软件MEDICI分析了n埋层的浓度、长度和p-降场层的杂质浓度分布对器件耐压的影响,并进行了器件和工艺的优化设计.在国内工艺生产线成功地研制出1200V高压LDMOS,并已用于1200V功率集成电路中.

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

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      有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制[J]. Journal of Semiconductors, 2005, In Press. 有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制[J]. Chin. J. Semicond., 2005, 26(3): 541.Export: BibTex EndNote
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      有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制[J]. Journal of Semiconductors, 2005, In Press.

      有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制[J]. Chin. J. Semicond., 2005, 26(3): 541.
      Export: BibTex EndNote

      有n埋层结构的1200V横向变掺杂双RESURF LDMOS研制

      • Received Date: 2015-08-19

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