| Citation: |
Wang Dong, Zhang Jingwen, Han Feng, Zhang Xin'an, Bi Zhen, Bian Xuming, Hou Xun. Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE[J]. Journal of Semiconductors, 2007, In Press.
Wang D, Zhang J W, Han F, Z X, Bi Z, Bian X M, Hou X. Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE[J]. Chin. J. Semicond., 2007, 28(S1): 293.
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Effect of 900℃ Air Annealing on Luminescence Properties of ZnO Thin Film by L-MBE
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Abstract
High quality preferred(0002)orientation ZnO thin films are grown on c-plane AIz03 substrates by L-MBE.The samples are annealed in the air at 900℃.By comparing X-ray diffraction and photoluminescence spectra of the annealed with unannealed sample，we find that the crystalline quality and luminescence performance of the annealed samples are improved greatly.The thermal photoluminescence spectra indicates that there are three near band emitting(NBE) ultraviolet emitting peaks at 3.352，3.309 and 3.237eV，which are respectively due to free excitonics emitting，a exciton bounded to a neural im- purity of Is and it’s first LO phonon replica.With rising temperature，the location of the luminescence peak shifts to the long-wave(‘red shift’)，the full wave at half maximum(FWHM)increases；the luminescence intensity of deep level emitting (DLE) is veryweak -
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