Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 197-203
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InAs Wires on InP (001)

Wu Ju and Wang Zhanguo

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Abstract: The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy.These InAs wires have some distinctive features in their growth and structure.This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

Key words: quantum wires,  InAs, MBE

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(2): 197-203
      Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, In Press. Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.Export: BibTex EndNote
      Citation:
      Wu Ju, Wang Zhanguo. InAs Wires on InP (001)[J]. Journal of Semiconductors, 2006, In Press.

      Wu J, Wang Z G. InAs Wires on InP (001)[J]. Chin. J. Semicond., 2006, 27(2): 197.
      Export: BibTex EndNote
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      InAs Wires on InP (001)

      • Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-20

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