| Citation: |
Ran Junxue, Wang Xiaoliang, Wang Cuimei, Wang Junxi, Zeng Yiping, Li Jinmin. Simulation on High-Frequency Performance of AlGaN/GaN HBTs[J]. Journal of Semiconductors, 2005, In Press.
Ran J X, Wang X L, Wang C M, Wang J X, Zeng Y P, Li J M. Simulation on High-Frequency Performance of AlGaN/GaN HBTs[J]. Chin. J. Semicond., 2005, 26(13): 147.
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Simulation on High-Frequency Performance of AlGaN/GaN HBTs
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Abstract
The frequency performance of n-p-n AlGaN/GaN heterojunction bipolar transistors (HBTs) is calculated.The effects of some material parameters of the emitter,base and, collector on the frequency performances of n-p-n AlGaN/GaN HBTs are also investigated.It indicates that the frequency characters are mainly influenced by base designs.The frequency will be effectively improved by reducing the resistivity,increasing the hole concentration and mobility of the base. -
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