Chin. J. Semicond. > 2005, Volume 26 > Issue 11 > 2107-2110
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Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Jiang Huihua, Yang Deren, Tian Daxi, Ma Xiangyang, Li Liben and Que Duanlin

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Abstract: Oxygen precipitation in conventional heavily B-doped Czochralski (CZ) silicon (HB-Si) and heavily Ge-B codoped CZ silicon (Ge codoped HB-Si) subjected to single step annealing at 650～1150℃ for 64h or low-high two step annealing(650℃/16h＋1000℃/16h and 800℃/4～128h＋1000℃/16h) are comparatively investigated.It is found that the density of bulk microdefects (BMDs) in Ge codoped HB-Si is much lower than that in HB-Si.The mechanism of which is preliminarily discussed.

Key words: heavily boron-doped Czochralski silicon, germanium, oxygen precipitation

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(11): 2107-2110
      Jiang Huihua, Yang Deren, Tian Daxi, Ma Xiangyang, Li Liben, Que Duanlin. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2005, In Press. Jiang H H, Yang D R, Tian D X, Ma X Y, Li L B, Que D L. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Chin. J. Semicond., 2005, 26(11): 2107.Export: BibTex EndNote
      Citation:
      Jiang Huihua, Yang Deren, Tian Daxi, Ma Xiangyang, Li Liben, Que Duanlin. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2005, In Press.

      Jiang H H, Yang D R, Tian D X, Ma X Y, Li L B, Que D L. Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon[J]. Chin. J. Semicond., 2005, 26(11): 2107.
      Export: BibTex EndNote
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      Effects of Germanium on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310028,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310029,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310030,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310031,China

      • State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310032,China

      • Received Date: 2015-08-19

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