SEMICONDUCTOR INTEGRATED CIRCUITS

A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor

Shuo Wang, Xinnian Zheng, Hao Yang and Haiying Zhang

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 Corresponding author: Xinnian Zheng, E-mail: zhengxinnian@ime.ac.cn

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Abstract: A two-stage monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated in 0.5 μm GaAs pHEMT is presented. The Miller effect introduced by the parasitic gate-drain capacitance is utilized to decrease the value of the input inductor. Additionally, the input on-chip inductor is a novel high Q gradual structure. The noise figure is reduced with these two methods. With good input and output matching, the LNA achieves a noise figure of 0.75 dB and a small signal gain of 32.7 dB over 698-806 MHz. The input 1 dB compression point is -21.8 dBm and the input third order interception point is -10 dBm.

Key words: LNApHEMTMiller effectgradual inductor



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Fig. 1.  The energy band structure of pHEMT.

Fig. 2.  The small-signal equivalent circuit of common-source circuit with source degeneration inductor.

Fig. 3.  The power supply of the test board.

Fig. 4.  The schematic of LNA.

Fig. 5.  The effect of drain parallel capacitor on $Z_{\rm d}$.

Fig. 6.  The required $L_{\rm g}$ and $L_{\rm s}$ depending on $C_{\rm d}$.

Fig. 7.  The noise figure depending on $C_{\rm d}$.

Fig. 8.  The sketch map of the improved inductor.

Fig. 9.  The inductance of the standard and optimized inductor.

Fig. 10.  The $Q$-factor of the standard and optimized inductor.

Fig. 11.  The noise figure of the LNA with the standard and optimized inductor.

Fig. 12.  (a) The test PCB board. (b) The chip's micro-photograph.

Fig. 13.  Comparison of the measured and simulated input reflection coefficient.

Fig. 14.  Comparison of the measured and simulated output reflection coefficient.

Fig. 15.  Comparison of the measured and simulated small signal gain and reverse isolation.

Fig. 16.  Comparison of the measured and simulated noise figure.

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Table 1.   Comparison of different pHEMT transistors.

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Table 2.   Comparison with previous reports of LNAs.

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    Received: 22 December 2014 Revised: Online: Published: 01 July 2015

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      Shuo Wang, Xinnian Zheng, Hao Yang, Haiying Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. Journal of Semiconductors, 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001 S Wang, X N Zheng, H Yang, H Y Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. J. Semicond., 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001.Export: BibTex EndNote
      Citation:
      Shuo Wang, Xinnian Zheng, Hao Yang, Haiying Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. Journal of Semiconductors, 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001

      S Wang, X N Zheng, H Yang, H Y Zhang. A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor[J]. J. Semicond., 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001.
      Export: BibTex EndNote

      A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor

      doi: 10.1088/1674-4926/36/7/075001
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      Project supported by the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 172511KYSB20130108).

      More Information
      • Corresponding author: E-mail: zhengxinnian@ime.ac.cn
      • Received Date: 2014-12-22
      • Accepted Date: 2015-03-12
      • Published Date: 2015-01-25

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