SEMICONDUCTOR DEVICES

Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

Xin Wan1, Weisong Zhou1, , Daoguang Liu1, Hanliang Bo1 and Jun Xu2

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 Corresponding author: Weisong Zhou, E-mail: zhouws@tsinghua.edu.cn

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Abstract: It was demonstrated that heavy ions can induce large current-voltage (I-V) characteristics shift in commercial trench power MOSFETs, named single event microdose effect (SE-microdose effect). A model is presented to describe this effect. This model calculates the charge deposition by a single heavy ion hitting oxide and the subsequent charge transport under an electric field. Holes deposited at the SiO2/Si interface by a Xe ion are calculated by using this model. The calculated results were then used in Sentaurus TCAD software to simulate a trench power MOSFET's I-V curve shift after a Xe ion has hit it. The simulation results are consistent with the related experiment's data. In the end, several factors which affect the SE-microdose effect in trench power MOSFETs are investigated by using this model.

Key words: trench power MOSFETsSE-microdose effectcharge deposition model



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Fig. 1.  Schematic of a heavy ion passing through a trench power MOSFET.

Fig. 2.  Four Stages of a heavy-ion introduce charge in SiO$_{2}$/Si interface. (a) Charge generation. (b) Charge recombination. (c) Holes transport. (d) holes capture.

Fig. 3.  Katz model results of charge density profile produced by heavy ions.

Fig. 4.  Hole distribution after electron hole recombination.

Fig. 5.  Holes distribution (a) before and (b) after holes transport stage.

Fig. 6.  Cross-section of the simulated device.

Fig. 7.  Subthreshold characteristics before and after single Xe hit.

Fig. 8.  Plot of subthreshold voltage shifts versus hitting position and electric field.

Fig. 9.  Plot of subthreshold voltage shifts in various thickness oxide.

Fig. 10.  Plot of subthreshold voltage shifts induced by different ions.

Table 1.   LET value of ions.

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Table 2.   Charge yield in different electric fields.

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Table 3.   Kuboyama's experiment conditions.

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Table 4.   Comparison of trapped charge at interface by different heavy ions.

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    Received: 29 August 2014 Revised: Online: Published: 01 May 2015

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      Xin Wan, Weisong Zhou, Daoguang Liu, Hanliang Bo, Jun Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. Journal of Semiconductors, 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003 X Wan, W S Zhou, D G Liu, H L Bo, J Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. J. Semicond., 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003.Export: BibTex EndNote
      Citation:
      Xin Wan, Weisong Zhou, Daoguang Liu, Hanliang Bo, Jun Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. Journal of Semiconductors, 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003

      X Wan, W S Zhou, D G Liu, H L Bo, J Xu. Charge deposition model for investigating SE-microdose effect in trench power MOSFETs[J]. J. Semicond., 2015, 36(5): 054003. doi: 10.1088/1674-4926/36/5/054003.
      Export: BibTex EndNote

      Charge deposition model for investigating SE-microdose effect in trench power MOSFETs

      doi: 10.1088/1674-4926/36/5/054003
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      • Corresponding author: E-mail: zhouws@tsinghua.edu.cn
      • Received Date: 2014-08-29
      • Accepted Date: 2014-12-16
      • Published Date: 2015-01-25

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