Chin. J. Semicond. > 2006, Volume 27 > Issue 8 > 1431-1435
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Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector

Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Su Shubing, Liu Xinyu, Liu Xunchun and Qian He

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Abstract: A novel InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) structure is designed,in which a thin heavily doped n+-InP layer between the base and the collector is used to eliminate the energy spike at the B-C junction and overcome the electron blocking effect.The dependence of the effective barrier spike at the B-C junction and the I-V characteristics of the DHBT on the thickness and doping density of the n+-InP composite collector are analyzed theoretically.The results show that the device performance is optimal when the doping density is 3E19cm-3 and the thickness is 3nm for the n+-InP composite collector.The InP/InGaAs/InP DHBTs with composite doping collector are grown by gas source molecular beam epitaxy (GSMBE).The DC characteristics of the devices demonstrate that the InP/InGaAs/InP DHBT designed here effectively eliminates the energy spike at the B-C junction and improves the device performance.

Key words: InP/InGaAs, heterojunction bipolar transistor, composite collector, doping, barrier spike

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2006

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      Article Navigation >  Journal of Semiconductors  > 2006  >  27(8): 1431-1435
      Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Su Shubing, Liu Xinyu, Liu Xunchun, Qian He. Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector[J]. Journal of Semiconductors, 2006, In Press. Sun H, Qi M, Xu A H, Ai L K, Su S B, Liu X Y, Liu X C, Qian H. Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector[J]. Chin. J. Semicond., 2006, 27(8): 1431.Export: BibTex EndNote
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      Sun Hao, Qi Ming, Xu Anhuai, Ai Likun, Su Shubing, Liu Xinyu, Liu Xunchun, Qian He. Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector[J]. Journal of Semiconductors, 2006, In Press.

      Sun H, Qi M, Xu A H, Ai L K, Su S B, Liu X Y, Liu X C, Qian H. Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector[J]. Chin. J. Semicond., 2006, 27(8): 1431.
      Export: BibTex EndNote
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      Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200051,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200052,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100030,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100031,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100032,China

      • Received Date: 2015-08-20

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