| Citation: |
Yang Fan, Wang Xiangzhan, Zheng Wei, Ren Jun, You Huancheng, Li Liping, Yang Mohua. Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon[J]. Journal of Semiconductors, 2006, In Press.
Yang F, Wang X Z, Zheng W, Ren J, You H C, Li L P, Yang M H. Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon[J]. Chin. J. Semicond., 2006, 27(6): 1084.
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Wide-Band 2π Equivalent-Circuit Model for Spiral Inductors on Silicon
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Abstract
A novel physical model is proposed for monolithic RF spiral inductor on high-loss silicon substrate.This model takes the following factors into account: the functions of skin effect,proximity effect,and eddy current losses in the substrate to frequency-dependent series parameters Ls and Rs in light of modified partial equivalent element circuit methodology and a full-coupled transformer loop.Also, distributed characteristics of parasitic capacitance are captured by a 2π equivalent-circuit.Up to 15GHz,the model is quite accurate.The results are within 8% of data from a full-wave electromagnetic field simulator,including equivalent inductor Leff,resistor Reff,and quality factor Q.Hopefully,it can be applied to further theory research and optimum design of RFIC spiral inductors on Si. -
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