Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 157-159

Quality of ZnO Expitaxial Film on m-Sapphire Substrate

Cui Junpeng, Duan Yao, Wang Xiaofeng and Zeng Yiping

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Abstract: ZnO epitaxial film was grown on m-sapphire substrate by home-made CVD equipment. The size of the film is micrometer range.The structure of the ZnOfilm is investigated by XRD and DXRD. The thickness of ZnO film and its section is observed by SEM. We also investigate the optical and electrical properties of ZnO film by PL spectrum and Hall respectirely.

Key words: m-sapphireZnO epitaxial filmmicrometer size

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Cui Junpeng, Duan Yao, Wang Xiaofeng, Zeng Yiping. Quality of ZnO Expitaxial Film on m-Sapphire Substrate[J]. Journal of Semiconductors, 2007, In Press. Cui J P, Duan Y, Wang X F, Zeng Y P. Quality of ZnO Expitaxial Film on m-Sapphire Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 157.Export: BibTex EndNote
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      Cui Junpeng, Duan Yao, Wang Xiaofeng, Zeng Yiping. Quality of ZnO Expitaxial Film on m-Sapphire Substrate[J]. Journal of Semiconductors, 2007, In Press.

      Cui J P, Duan Y, Wang X F, Zeng Y P. Quality of ZnO Expitaxial Film on m-Sapphire Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 157.
      Export: BibTex EndNote

      Quality of ZnO Expitaxial Film on m-Sapphire Substrate

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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