| Citation: |
Yao Xiaojiang, Li Bin, Chen Yanhu, Chen Xiaojuan, Wei Ke, Li Chengzhan, Luo Weijun, Wang Xiaoliang, Liu Dan, Liu Guoguo, Liu Xinyu. AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band[J]. Journal of Semiconductors, 2007, In Press.
Yao X J, Li B, Chen Y H, Chen X J, Wei K, Li C Z, Luo W J, Wang X L, Liu D, Liu G G, Liu X Y. AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band[J]. Chin. J. Semicond., 2007, 28(4): 514.
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AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
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Abstract
A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured.The amplifier consists of four 10×120μm transistors.A Wilkinson splitters and combining were used to divide and combine the power.By biasing the amplifier at VDS=40V,IDS=0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency (PAE) of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.-
Keywords:
- AlGaN/GaN HEMTs,
- power combining,
- MIC,
- power amplifiers
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References
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