J. Semicond. > 2016, Volume 37 > Issue 3 > 032001, doi: 10.1088/1674-4926/37/3/032001
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SEMICONDUCTOR PHYSICS

Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic

I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta and R. Azizi

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 Corresponding author: I. B. Kherchachi, Email: imenphy12@gmail.com

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Abstract: Tin sulfide(SnxSy) thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃. The influence of deposition time t=2, 4, 6, 8 and 10 min on different properties of thin films, such as(XRD), photoluminescence(PL) and(UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS2. The results of the(UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity(ρ) values of SnxSy films have changed from 8.1×10-4 to 1.62Ω·cm with deposition time.

Key words: structural, tin sulfide, ultrasonic spray, optical and electrical properties



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Fig. 1.  The variation of the films thickness and growth rate as a function of deposition time.

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Fig. 2.  X-ray spectra of the samples of Sn$_{x}$S$_{y}$: SnS$_{2}$,Sn$_{2}$S$_{3}$,SnS.

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Fig. 3.  Dependence of crystallite size and strain on deposition time.

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Fig. 4.  The variation of dislocation density and the variation of the number of crystallites with the deposition time of Sn$_{x}$S$_{y}$ thin films.

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Fig. 5.  Transmission curves for Sn$_{x}$S$_{y}$ at different deposition times.

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Fig. 6.  The plot of ($\alpha h \upsilon)^{ 2}$ versus ($h \upsilon)$ for Sn$_{x}$S$_{y}$ film.

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Fig. 7.  The variation of optical band gap and disorder of Sn$_{x}$S$_{y}$ at different deposition time.

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Fig. 8.  (Color online) PL spectra versus wavelength $\lambda$ plot of Sn$_{x}$S$_{y}$ thin films prepared at different deposition times.

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Fig. 9.  The variation of electrical resistivity with different deposition time.

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Table 1.   Structural parameters of spray ultrasonic Sn$_{x}$S$_{y}$ films.

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    Received: 03 August 2015 Revised: Online: Published: 01 March 2016

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      Article Navigation >  Journal of Semiconductors  > 2016  >  37(3): 032001
      I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi. Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic[J]. Journal of Semiconductors, 2016, 37(3): 032001. doi: 10.1088/1674-4926/37/3/032001 I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi. Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic[J]. J. Semicond., 2016, 37(3): 032001. doi: 10.1088/1674-4926/37/3/032001.Export: BibTex EndNote
      Citation:
      I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi. Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic[J]. Journal of Semiconductors, 2016, 37(3): 032001. doi: 10.1088/1674-4926/37/3/032001

      I. B. Kherchachi, A. Attaf, H. Saidi, A. Bouhdjer, H. Bendjedidi, Y. Benkhetta, R. Azizi. Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic[J]. J. Semicond., 2016, 37(3): 032001. doi: 10.1088/1674-4926/37/3/032001.
      Export: BibTex EndNote
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      Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic

      doi: 10.1088/1674-4926/37/3/032001

      • Physics of Thin Films and Applications Laboratory(LPCMA), University of Biskra, BP 145 RP, Biskra 07000, Algeria

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      • Corresponding author: I. B. Kherchachi, Email: imenphy12@gmail.com
      • Received Date: 2015-08-03
      • Accepted Date: 2015-10-04
      • Published Date: 2016-01-25

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