SEMICONDUCTOR TECHNOLOGY

Highly controllable ICP etching of GaAs based materials for grating fabrication

Qiu Weibin and Wang Jiaxian

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Abstract: Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated. A slow etching rate of 13 nm/min was achieved with RF1 = 10 W, RF2 = 20 W and a high ratio of Ar to SiCl4 flow. First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters. AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm, which is smooth enough to regrow high quality materials for devices.

Key words: semiconductor processinductively coupled plasmadry etchinggratings

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    Received: 18 August 2015 Revised: Online: Published: 01 February 2012

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      Qiu Weibin, Wang Jiaxian . Highly controllable ICP etching of GaAs based materials for grating fabrication[J]. Journal of Semiconductors, 2012, 33(2): 026001. doi: 10.1088/1674-4926/33/2/026001 Qiu W B, Wang J X. Highly controllable ICP etching of GaAs based materials for grating fabrication[J]. J. Semicond., 2012, 33(2): 026001. doi: 10.1088/1674-4926/33/2/026001.Export: BibTex EndNote
      Citation:
      Qiu Weibin, Wang Jiaxian . Highly controllable ICP etching of GaAs based materials for grating fabrication[J]. Journal of Semiconductors, 2012, 33(2): 026001. doi: 10.1088/1674-4926/33/2/026001

      Qiu W B, Wang J X. Highly controllable ICP etching of GaAs based materials for grating fabrication[J]. J. Semicond., 2012, 33(2): 026001. doi: 10.1088/1674-4926/33/2/026001.
      Export: BibTex EndNote

      Highly controllable ICP etching of GaAs based materials for grating fabrication

      doi: 10.1088/1674-4926/33/2/026001
      • Received Date: 2015-08-18
      • Published Date: 2012-01-20

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