| Citation: |
Su Jianxiu, Du Jiaxi, Zhang Zhuqing, Kang Renke. Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive[J]. Journal of Semiconductors, 2012, 33(10): 106003. doi: 10.1088/1674-4926/33/10/106003
Su J X, Du J X, Zhang Z Q, Kang R K. Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive[J]. J. Semicond., 2012, 33(10): 106003. doi: 10.1088/1674-4926/33/10/106003.
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Material removal rate of 6H-SiC crystal substrate CMP using an alumina (Al2O3) abrasive
doi: 10.1088/1674-4926/33/10/106003
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Abstract
The influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational velocity of the polishing platen and the carrier and the polishing pressure, on the material removal rate of SiC crystal substrate (0001) Si and a (0001) C surface have been studied based on the alumina abrasive in chemical mechanical polishing (CMP). The results proposed by our research here will provide a reference for developing the slurry, optimizing the process parameters, and investigating the material removal mechanism in the CMP of SiC crystal substrate.-
Keywords:
- SiC crystal substrate
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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