Chin. J. Semicond. > 2007, Volume 28 > Issue 11 > 1717-1721

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Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Li Meng and Yu Zhiping

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Abstract: A compact model for the integrated inversion charge density Qi in double-gate (DG-) MOSFETs is developed.For nanoscale applications,quantum confinement of the inversion carriers must be taken into account.Based on the previous work of Ge,we establish an expression for the surface potential with respect to Qi,and form an implicit equation,from which Qi can be solved.Results predicted by our model are compared to published data as well as results from Schred,a popular 1D numerical solver that solves the Poisson’s and Schrdinger equations self-consistently.Good agreement is obtained for a wide range of silicon layer thickness,confirming the superiority of this model over previous work in this field.

Key words: compact modelquantum confinement effectdouble-gate MOSFETs

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    Received: 18 August 2015 Revised: 21 July 2007 Online: Published: 01 November 2007

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      Li Meng, Yu Zhiping. Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs[J]. Journal of Semiconductors, 2007, In Press. Li M, Yu Z P. Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs[J]. Chin. J. Semicond., 2007, 28(11): 1717.Export: BibTex EndNote
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      Li Meng, Yu Zhiping. Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs[J]. Journal of Semiconductors, 2007, In Press.

      Li M, Yu Z P. Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs[J]. Chin. J. Semicond., 2007, 28(11): 1717.
      Export: BibTex EndNote

      Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-19
      • Revised Date: 2007-07-21
      • Published Date: 2007-10-24

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