| Citation: |
Guo Jiarong, Ran Feng. A new low-voltage and high-speed sense amplifier for flash memory[J]. Journal of Semiconductors, 2011, 32(12): 125003. doi: 10.1088/1674-4926/32/12/125003
Guo J R, Ran F. A new low-voltage and high-speed sense amplifier for flash memory[J]. J. Semicond., 2011, 32(12): 125003. doi: 10.1088/1674-4926/32/12/125003.
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A new low-voltage and high-speed sense amplifier for flash memory
doi: 10.1088/1674-4926/32/12/125003
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Abstract
A new low-voltage and high-speed sense amplifier is presented, based on a very simple direct current-mode comparison. It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage, low power and high precision. The proposed amplifier can sense a 0.5 μ A current gap and work with a lowest voltage of 1 V. In addition, the current power of a single amplifier is optimized by 15%.-
Keywords:
- flash memory,
- sense amplifier,
- current-mode,
- low-voltage
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References
[1] [2] [3] [4] [5] [6] [7] [8] [9] -
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