| Citation: |
Zhao Bo, Li Qingshan, Zhang Ning, Chen Da, Zheng Xuegang. Optical and Electrical Properties of ZnO/PS Heterostructure[J]. Journal of Semiconductors, 2006, In Press.
Zhao B, Li Q S, Zhang N, Chen D, Zheng X G. Optical and Electrical Properties of ZnO/PS Heterostructure[J]. Chin. J. Semicond., 2006, 27(7): 1217.
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Optical and Electrical Properties of ZnO/PS Heterostructure
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Abstract
The optical and electrical properties of ZnO/porous Si (PS) heterostructure are studied.The PS sample is formed by the anodization of a single-crystal Si wafer.ZnO films are then deposited on the PS substrate by pulsed laser deposition.White light formed by combining the red emission from the PS layers with the blue-green emission from the ZnO films is obtained.Due to the roughness of the PS surface,some cracks appear in the ZnO films,which can be seen from the SEM spectra.The I-V characteristics of the ZnO/PS heterostructure are different from those of the common diode,whose reverse current is not saturated.Based on the I-V characteristics,an energy band diagram is proposed. -
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