| Citation: |
Zhang Han, Chen Nuofu, Wang Yu, Yin Zhigang, Zhang Xingwang, Shi Huiwei, Wang Yanshuo, Huang Tianmao. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. Journal of Semiconductors, 2010, 31(8): 084009. doi: 10.1088/1674-4926/31/8/084009
Zhang H, Chen N F, Wang Y, Yin Z G, Zhang X W, Shi H W, Wang Y S, Huang T M. Design and optimization of a monolithic GaInP/GaInAs tandem solar cell[J]. J. Semicond., 2010, 31(8): 084009. doi: 10.1088/1674-4926/31/8/084009.
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Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
doi: 10.1088/1674-4926/31/8/084009
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Abstract
We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate. oindent-
Keywords:
- III–V semiconductor
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