Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 613-617

PDF

Abstract: 介绍了一种新型的常压射频激励低温冷等离子体喷射装置,利用电流和电压探针研究了该等离子体的放电特性,利用热电偶研究了喷射出的等离子体束流温度,得到其放电与传统的真空室中电容耦合放电具有一致的特性.利用该等离子体装置在大气压下对AZ9918光刻胶进行了干法刻蚀实验,用电镜观察了刻蚀留胶前后硅表面的效果,研究了放电等离子体功率以及衬底温度对刻蚀速率的影响,在放电功率为300W时,得到刻蚀速率接近500nm/min.

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 2867 Times PDF downloads: 2504 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      常压射频激励低温冷等离子体刻蚀光刻胶[J]. Journal of Semiconductors, 2005, In Press. 常压射频激励低温冷等离子体刻蚀光刻胶[J]. Chin. J. Semicond., 2005, 26(3): 613.Export: BibTex EndNote
      Citation:
      常压射频激励低温冷等离子体刻蚀光刻胶[J]. Journal of Semiconductors, 2005, In Press.

      常压射频激励低温冷等离子体刻蚀光刻胶[J]. Chin. J. Semicond., 2005, 26(3): 613.
      Export: BibTex EndNote

      常压射频激励低温冷等离子体刻蚀光刻胶

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return