| Citation: |
Wu Huizhen, Liang Jun, Lao Yanfeng, Yu Ping, Xu Tianning, Qiu Dongjiang. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Journal of Semiconductors, 2006, In Press.
Wu H Z, Liang J, Lao Y F, Yu P, Xu T N, Qiu D J. Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors[J]. Chin. J. Semicond., 2006, 27(13): 218.
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Electrical Properties of Wide Bandgap ZnMgO and Fabricationof Transparent Thin Film Transistors
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Abstract
We propose to use Hexagonal phase Zn1-xMgxO as active channel layer and cubic phase Zn1-xMgxO as gate dielectric of transparent thin film transistors(TFTs).The consistent Zn1-xMgxO thin films are sequentially deposited on ITO substrates and monolithigraph and electrical contact are made.The TFTs have demonstrated an on/off ratio of 1E4 and a channel mobility on the order of 0.6cm2/(V·s).Leakage current is as low as 4.0E-8A at 2.5MV/cm electrical field. -
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Proportional views
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