| Citation: |
Li Ming, Zhang Haiying, Xu Jingbo, Fu Xiaojun. Power Characteristics of Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with T-Shaped Gate[J]. Journal of Semiconductors, 2008, In Press.
Li M, Zhang H Y, Xu J B, Fu X J. Power Characteristics of Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with T-Shaped Gate[J]. J. Semicond., 2008, 29(12): 2331.
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Power Characteristics of Metamorphic In0.52Al0.48As／In0.6Ga0.4As HEMTs on GaAs Substrates with T-Shaped Gate
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Abstract
200nm gate-length power InAlAs/InGaAs MHEMTs with T-shaped gate are characterized for DC,RF,and power performance.The MHEMTs show excellent DC output characteristics with an extrinsic transconductance of 510mS/mm and a threshold voltage of -1.8V.The fT and fmax obtained for the 0.2μm×100μm MHEMTs are 138 and 78GHz,respectively.Power characteristics are obtained under different frequencies.When input power (Pin) is -0.88dBm (or 2.11dBm), the MHEMTs exhibit high power characteristics at 8GHz.Output power (Pout) ,associated gain, power added efficiency (PAE) and density of Pout are 4.05(13.79)dBm,14.9(11.68)dB,67.74(75.1)%,254(239)mW/mm respectively.These promising results are on the path to the application of millimeter wave devices and integrated circuits with improved manufacturability over InP HEMT.-
Keywords:
- MHEMT,
- InAlAs/InGaAs,
- power characteristics,
- T-shaped gate
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References
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