| Citation: |
Xu Jian, Shen Bo, Xu Fujun, Miao Zhenlin, Wang Maojun, Huang Sen, Lu Lin, Pan Yaobo, Yang Zhijian, Zhang Guoyi. Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN[J]. Journal of Semiconductors, 2007, In Press.
Xu J, Shen B, Xu F J, Miao Z L, Wang M J, Huang S, Lu L, Pan Y B, Yang Z J, Zhang G Y. Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN[J]. Chin. J. Semicond., 2007, 28(S1): 127.
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Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN
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Abstract
The influence of the annealing pressure of the nucleation layer on the resistivity of GaN films grown in metal-organic chemical vapor deposition is investigated.It is found that the sheet resistance of GaN increases over seven orders of magnitude with decreasing the annealing pressure.Under the annealing pressure of 75 tor，GaN with sheet resistance higher than 10^11Ω/口 is achieved. X-ray diffraction measurements demonstrate that the density of the edge-type dislocations increases significantly in comparison with that of screw-type dislocations with decreasing the annealing pressure in GaN.It is suggested that the high-resistance GaN is achieved due to the deep acceptor leveIs introduced by the edge-type dislocations. -
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