SEMICONDUCTOR DEVICES

Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode

Chunlei Zheng, Hongbin Pu, Hong Li and Zhiming Chen

+ Author Affiliations

 Corresponding author: Hongbin Pu, E-mail: puhongbin@xaut.edu.cn

PDF

Abstract: We give the first report on the experimental investigation of a p-β -FeSi2/n-4H-SiC heterojunction. A p-β -FeSi2/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing (RTA). Sharp film-substrate interfaces were confirmed by scanning electron microscopy (SEM). The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm2 at a bias voltage of -1 V under illumination by a 5 mW, 1.31 μ m laser, and the dark current density was approximately 0.537 mA/cm2. The detectivity was estimated to be 8.8 × 109 cmHz1/2/W at 1.31 μ m. All of the measurements were made at room temperature. The results suggest that the p-β -FeSi2/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.

Key words: β -FeSi2magnetron sputteringp-β -FeSi2/n-4H-SiC heterojunctionphotoelectric properties



[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
Fig. 1.  Cross-sectional SEM image of $\beta $-FeSi$_{2}$/4H-SiC heterojunction.

Fig. 2.  P-$\beta $-FeSi$_{2}$/n-4H-SiC heterojunction photodiode structure.

Fig. 3.  Equilibrium band diagram of p-$\beta $-FeSi$_{2}$/n-4H-SiC junction.

Fig. 4.  $J$-$V$ curves of p-$\beta $-FeSi$_{2}$/n-4H-SiC heterojunction photodiode under dark and illumination.

DownLoad: CSV
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2277 Times PDF downloads: 17 Times Cited by: 0 Times

    History

    Received: 07 October 2014 Revised: Online: Published: 01 May 2015

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Chunlei Zheng, Hongbin Pu, Hong Li, Zhiming Chen. Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode[J]. Journal of Semiconductors, 2015, 36(5): 054009. doi: 10.1088/1674-4926/36/5/054009 C L Zheng, H B Pu, H Li, Z M Chen. Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode[J]. J. Semicond., 2015, 36(5): 054009. doi: 10.1088/1674-4926/36/5/054009.Export: BibTex EndNote
      Citation:
      Chunlei Zheng, Hongbin Pu, Hong Li, Zhiming Chen. Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode[J]. Journal of Semiconductors, 2015, 36(5): 054009. doi: 10.1088/1674-4926/36/5/054009

      C L Zheng, H B Pu, H Li, Z M Chen. Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode[J]. J. Semicond., 2015, 36(5): 054009. doi: 10.1088/1674-4926/36/5/054009.
      Export: BibTex EndNote

      Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode

      doi: 10.1088/1674-4926/36/5/054009
      Funds:

      Project supported by the National Natural Science Foundation of China (No.51177134).

      More Information
      • Corresponding author: E-mail: puhongbin@xaut.edu.cn
      • Received Date: 2014-10-07
      • Accepted Date: 2014-12-29
      • Published Date: 2015-01-25

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return