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MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

Jie Binbin and Sah Chihtang

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Abstract: Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

Key words: MOSsilicontrapping capacitancedopant impuritiesdonorsacceptors

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    Received: 18 August 2015 Revised: Online: Published: 01 December 2011

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      Jie Binbin, Sah Chihtang. MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities[J]. Journal of Semiconductors, 2011, 32(12): 121002. doi: 10.1088/1674-4926/32/12/121002 Jie B B, Sah C T. MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities[J]. J. Semicond., 2011, 32(12): 121002. doi:  10.1088/1674-4926/32/12/121002.Export: BibTex EndNote
      Citation:
      Jie Binbin, Sah Chihtang. MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities[J]. Journal of Semiconductors, 2011, 32(12): 121002. doi: 10.1088/1674-4926/32/12/121002

      Jie B B, Sah C T. MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities[J]. J. Semicond., 2011, 32(12): 121002. doi:  10.1088/1674-4926/32/12/121002.
      Export: BibTex EndNote

      MOS Capacitance-Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

      doi: 10.1088/1674-4926/32/12/121002
      • Received Date: 2015-08-18

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