Chin. J. Semicond. > 2006, Volume 27 > Issue S1 > 11-14

PAPERS

Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC

Zhong Zhiqin, Gong Min, Wang Ou, Yu Zhou, Yang Zhimei, Xu Shijie, Chen Xudong, Ling Chichung, Fung Hanyuan and Beling C D

+ Author Affiliations

PDF

Abstract: n-type 6H-SiC materials irradiated with electrons having energies of Ee=1.7,0.5,and 0.4MeV and neutrons are studied via low temperature photoluminescence.For Ee≥0.5MeV electron-irradiated and neutron-irradiated samples,the LTPL emission lines S1/S2/S3 at 478.6/483.3/486.1nm are observed for the first time.Thermal annealing studies show that the defects S1/S2/S3 disappear at 500℃.However,the well-known D1-center is only detected for annealing temperatures over 700℃.By considering the threshold displacement energies of Emin(C) and Emin(Si) and thermal annealing behavior,it is found that the defects S1/S2/S3 are a set of silicon-related primary defects and the D1-center is a kind of secondary defect.

Key words: 6H-SiCirradiationLTPLdefects

  • Search

    Advanced Search >>

    Article Metrics

    Article views: 3245 Times PDF downloads: 1778 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 December 2006

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Zhong Zhiqin, Gong Min, Wang Ou, Yu Zhou, Yang Zhimei, Xu Shijie, Chen Xudong, Ling Chichung, Fung Hanyuan, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Journal of Semiconductors, 2006, In Press. Zhong Z Q, Gong M, Wang O, Yu Z, Yang Z M, Xu S J, Chen X D, Ling C C N, Fu N H Y, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Chin. J. Semicond., 2006, 27(13): 11.Export: BibTex EndNote
      Citation:
      Zhong Zhiqin, Gong Min, Wang Ou, Yu Zhou, Yang Zhimei, Xu Shijie, Chen Xudong, Ling Chichung, Fung Hanyuan, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Journal of Semiconductors, 2006, In Press.

      Zhong Z Q, Gong M, Wang O, Yu Z, Yang Z M, Xu S J, Chen X D, Ling C C N, Fu N H Y, Beling C D. Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC[J]. Chin. J. Semicond., 2006, 27(13): 11.
      Export: BibTex EndNote

      Photoluminescence of Electron- and Neutron-Irradiated n-Type 6H-SiC

      • Received Date: 2015-08-20

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return