Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 454-458

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Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Deng Ning, Pan Liyang, Liu Zhihong, Zhu Jun, Chen Peiyi and Peng Li

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Abstract: A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.Simulation results indicate the new structure provides high speed and reliability.Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells.Memory cells with the proposed structure can achieve higher speed,lower voltage,and higher reliability.

Key words: flash memorySiGe quantum dotsenhanced F-N tunneling

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2006

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      Deng Ning, Pan Liyang, Liu Zhihong, Zhu Jun, Chen Peiyi, Peng Li. Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J]. Journal of Semiconductors, 2006, In Press. Deng N, Pan L Y, Liu Z H, Zhu J, Chen P Y, Peng L. Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J]. Chin. J. Semicond., 2006, 27(3): 454.Export: BibTex EndNote
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      Deng Ning, Pan Liyang, Liu Zhihong, Zhu Jun, Chen Peiyi, Peng Li. Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J]. Journal of Semiconductors, 2006, In Press.

      Deng N, Pan L Y, Liu Z H, Zhu J, Chen P Y, Peng L. Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J]. Chin. J. Semicond., 2006, 27(3): 454.
      Export: BibTex EndNote

      Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

      • Received Date: 2015-08-20

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