J. Semicond. > 2008, Volume 29 > Issue 2 > 293-297

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A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID

Pang Zegui, Zhuang Yiqi, Li Xiaoming and Li Jun

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Abstract: This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency.The structure is designed with 0.18μm standard CMOS technology, including two charge pumps, a current reference, and a group of bias circuits.Low-voltage performance is improved thanks to the bias structure, which eliminates the threshold voltage drop and body-effect of conventional circuits.A 350mV minimum input level is required to generate a 1.5V power supply for a 100kΩ load with power conversion efficiency (PCE) of 22%.PCE up to 29.8% is achieved with a 60kΩ load.Simulation results show that the new circuit is superior to conventional charge pumps.

Key words: UHF RFIDpower generationcharge pumplow voltageCMOS

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    Received: 18 August 2015 Revised: 12 October 2007 Online: Published: 01 February 2008

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      Pang Zegui, Zhuang Yiqi, Li Xiaoming, Li Jun. A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID[J]. Journal of Semiconductors, 2008, In Press. Pang Z G, Zhuang Y Q, Li X M, Li J. A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID[J]. J. Semicond., 2008, 29(2): 293.Export: BibTex EndNote
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      Pang Zegui, Zhuang Yiqi, Li Xiaoming, Li Jun. A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID[J]. Journal of Semiconductors, 2008, In Press.

      Pang Z G, Zhuang Y Q, Li X M, Li J. A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID[J]. J. Semicond., 2008, 29(2): 293.
      Export: BibTex EndNote

      A Low-Voltage, High Efficiency Power Generation Structure for UHF RFID

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-05
      • Revised Date: 2007-10-12
      • Published Date: 2008-01-31

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