SEMICONDUCTOR MATERIALS

High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, Xiao Hongling, Li Jing and Li Jinmin

+ Author Affiliations

PDF

Abstract: A homemade 7 × 2 inch MOCVD system is presented. With this system, high quality GaN epitaxial layers, InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown. The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%. Using the LED structural epitaxial layers, blue LED chips with area of 350 × 350 μm2 were fabricated. Under 20 mA injection current, the optical output power of the blue LED is 8.62 mW.

Key words: MOCVD

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3550 Times PDF downloads: 3869 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 26 November 2010 Online: Published: 01 March 2011

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, Xiao Hongling, Li Jing, Li Jinmin. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002 Yin H B, Wang X L, Ran J X, Hu G X, Zhang L, Xiao H L, Li J, Li J M. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. J. Semicond., 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002.Export: BibTex EndNote
      Citation:
      Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, Xiao Hongling, Li Jing, Li Jinmin. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002

      Yin H B, Wang X L, Ran J X, Hu G X, Zhang L, Xiao H L, Li J, Li J M. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system[J]. J. Semicond., 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002.
      Export: BibTex EndNote

      High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

      doi: 10.1088/1674-4926/32/3/033002
      • Received Date: 2015-08-18
      • Accepted Date: 2010-11-11
      • Revised Date: 2010-11-26
      • Published Date: 2011-02-23

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return